25A512
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. V SS ......................................................................................................... -0.3V to V CC +0.3V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
? NOTICE : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I):
T A = -40°C to +85°C
V CC = 1.7V to 3.0V
Param.
No.
D001
Sym.
V IH1
Characteristic
High-level input
Min.
.7 V CC
Max.
V CC +.3
Units
V
Test Conditions
voltage
D002
D003
D004
D005
D006
V IL1
V IL2
V OL
V OL
V OH
Low-level input
voltage
Low-level output
voltage
High-level output
-0.3
-0.3
V CC -0.2
0.3 V CC
0.2 V CC
0.4
0.2
V
V
V
V
V
V CC ??? 2.7V
V CC < 2.7V
I OL = 2.1 mA, V CC ?? 1.8V
I OL = 1.0 mA, V CC < 1.8V
I OH = -400 ? A
voltage
D007
D008
I LI
I LO
Input leakage current
Output leakage
±1
±1
? A
? A
CS = V CC , V IN = V SS TO V CC
CS = V CC , V OUT = V SS TO V CC
current
D009
C INT
Internal capacitance
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 3.0V (Note)
D010
I CC Read
8
mA
V CC = 3.0V; F CLK = 10.0 MHz;
SO = Open
Operating current
5
mA
V CC = 2.5V; F CLK = 10.0 MHz;
SO = Open
D011
I CC Write
6
5
mA
mA
V CC = 3.0V
V CC = 2.5V
D012
I CCS
Standby current
10
? A
CS = V CC = 3.0V, Inputs tied to V CC or
V SS , 85°C
D13
I CCSPD
Deep power-down
1
? A
CS = V CC = 2.5V, Inputs tied to V CC or
current
V SS , 85°C
Note:
This parameter is periodically sampled and not 100% tested.
DS22237C-page 2
Preliminary
? 2010-2011 Microchip Technology Inc.
相关PDF资料
25AA020A-I/MS IC EEPROM 2KBIT 10MHZ 8MSOP
25AA02E48-I/SN IC EEPROM 2KBIT 10MHZ 8SOIC
25AA080C-I/MS IC SRL EEPROM 1KX8 1.8V 8-MSOP
25AA1024T-I/MF IC EEPROM 1MBIT 20MHZ 8DFN
25AA160C-I/P IC SRL EEPROM 2KX8 1.8V 8-PDIP
25AA512T-I/MF IC EEPROM 512KBIT 20MHZ 8DFN
25C040X/ST IC EEPROM 4KBIT 3MHZ 8TSSOP
25C080-I/P IC EEPROM 8KBIT 3MHZ 8DIP
相关代理商/技术参数
25A512ISN 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:512 Kbit SPI Bus Serial EEPROM
25A512IST 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:512 Kbit SPI Bus Serial EEPROM
25A512T-I/SN 功能描述:电可擦除可编程只读存储器 512k 64K X 8 1.8V SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25A512T-I/ST 功能描述:电可擦除可编程只读存储器 512k 64K X 8 1.8V SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25A512TISN 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:512 Kbit SPI Bus Serial EEPROM
25A512TIST 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:512 Kbit SPI Bus Serial EEPROM
25A6 制造商:未知厂家 制造商全称:未知厂家 功能描述:PENTODE POWER AMPLIFIER
25-A659-00-00NP 制造商:Sumida Corporation 功能描述:- Bulk